Converting ambipolar double-walled nanotube bundles to unipolar carbon nanotube field-effect transistor devices by inner functionalization

Abstract

Carbon nanotube (CNT)-based transistor devices have been demonstrated andare seen as the next-generation alternative to replace the current generationelectronic devices based on silicon MOS technology. Their limitations, however,are related to their instability in ambient conditions and technical challenges inscaling up production of individual CNT devices. Herein, a simple technique toconvert ambipolar (both n- and p-carrier) individual CNT-based transistors intounipolar (p-type carrier) transistors that carry large currents 7 mA beforesaturation is demonstrated. Such large current-carrying capability from anindividual or single-bundle CNTs will be ideal for applications that require highcurrents such as output stages of radio frequency (RF) and audio amplifiers. Thiswork highlights the ability to tune CNT-based transistor devices to suit specificapplications, which is essential for the development of next generation ofnanoelectronics.