Electrical conduction in carbon-ion implanted diamond and other materials at low temperatures.
dc.contributor.author | Tshepe, Tshakane Frans | |
dc.date.accessioned | 2019-01-22T12:30:47Z | |
dc.date.available | 2019-01-22T12:30:47Z | |
dc.date.issued | 1992 | |
dc.description | A research report submitted to the Faculty of Science, University of the Witwatersrand, Johannesburg, in partial fulfilment of the requirements for the degree of Master of Science | en_ZA |
dc.description.abstract | The role of intersite electron correlation effects and the possible occurrence of the metal-insulator transition in carbon-ion implanted type IIa diamond samples have been studied at very low temperatures, using four- and two-point probe contact electrical conductivity measuring techniques. The measurements were extended to ruthenium oxide thin films in the presence and absence of a constant magnetic field of B = 4.0 T down to 100 mK, using a 3He-4He dilution refrigerator. The effect of the Coulomb gap in the variable range hopping regime has been well studied by other workers. The results tend to follow the Efros-Shklovskii behaviour with a trend towards the Mott T- 114 law for diamond samples far removed from the metal insulator transition, on the insulating side at low temperatures. | en_ZA |
dc.description.librarian | Andrew Chakane 2019 | en_ZA |
dc.identifier.uri | https://hdl.handle.net/10539/26299 | |
dc.language.iso | en | en_ZA |
dc.subject | Electric conductivity. | en_ZA |
dc.subject | Ion implantation. | en_ZA |
dc.subject | Carbon compounds. | en_ZA |
dc.subject | Materials at low temperatures. | en_ZA |
dc.title | Electrical conduction in carbon-ion implanted diamond and other materials at low temperatures. | en_ZA |
dc.type | Thesis | en_ZA |
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