Electrical conduction in carbon-ion implanted diamond and other materials at low temperatures.

Tshepe, Tshakane Frans
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The role of intersite electron correlation effects and the possible occurrence of the metal-insulator transition in carbon-ion implanted type IIa diamond samples have been studied at very low temperatures, using four- and two-point probe contact electrical conductivity measuring techniques. The measurements were extended to ruthenium oxide thin films in the presence and absence of a constant magnetic field of B = 4.0 T down to 100 mK, using a 3He-4He dilution refrigerator. The effect of the Coulomb gap in the variable range hopping regime has been well studied by other workers. The results tend to follow the Efros-Shklovskii behaviour with a trend towards the Mott T- 114 law for diamond samples far removed from the metal insulator transition, on the insulating side at low temperatures.
A research report submitted to the Faculty of Science, University of the Witwatersrand, Johannesburg, in partial fulfilment of the requirements for the degree of Master of Science
Electric conductivity., Ion implantation., Carbon compounds., Materials at low temperatures.