ETD Collection

Permanent URI for this collectionhttps://wiredspace.wits.ac.za/handle/10539/104


Please note: Digitised content is made available at the best possible quality range, taking into consideration file size and the condition of the original item. These restrictions may sometimes affect the quality of the final published item. For queries regarding content of ETD collection please contact IR specialists by email : IR specialists or Tel : 011 717 4652 / 1954

Follow the link below for important information about Electronic Theses and Dissertations (ETD)

Library Guide about ETD

Browse

Subject: search.filters.subject.Ion implantation.

Search Results

Now showing 1 - 4 of 4
  • No Thumbnail Available
    Item
    Metal-insulator transition in boron-ion implanted type IIa diamond.
    (2000) Tshepe, Tshakane
    High purity natural type Il a diamond specimens were used in this study. Conducting layers in the surfaces of these diamonds were generated using low-ion dose multiple implantation-annealing steps. The implantation energies and the ion-doses were spread evenly to intermix the point-defects, thereby increasing the probability of interstitialvacancy recombinations and promoting dopant-interstitial-vacancy combination resulting in activated dopant sites in the implanted layers. The process used to prepare our samples is known as cold-implantation-rapid-annealing (CIRA). Carbon-ion and boron-ion implantation was used to prepare the diamond specimens, and de-conductivity measurements in the temperature range of 1.5-300 K were made following each CIRA sequence. An electrical conductivity crossover from the Mott variable range hopping (VRH) to the Efros-Shklovskii VRH conduction was observed when the temperature of insulating samples was lowered. The conductivity crossover temperature Tcross decreases with increasing concentration of the boron-ion dose in the implanted layers, indicating the narrowing of the Coulomb gap in the single-particle density of states near the Fermi energy. (Abbreviation abstract)
  • No Thumbnail Available
    Item
    Electrical conduction in carbon-ion implanted diamond and other materials at low temperatures.
    (1992) Tshepe, Tshakane Frans
    The role of intersite electron correlation effects and the possible occurrence of the metal-insulator transition in carbon-ion implanted type IIa diamond samples have been studied at very low temperatures, using four- and two-point probe contact electrical conductivity measuring techniques. The measurements were extended to ruthenium oxide thin films in the presence and absence of a constant magnetic field of B = 4.0 T down to 100 mK, using a 3He-4He dilution refrigerator. The effect of the Coulomb gap in the variable range hopping regime has been well studied by other workers. The results tend to follow the Efros-Shklovskii behaviour with a trend towards the Mott T- 114 law for diamond samples far removed from the metal insulator transition, on the insulating side at low temperatures.
  • No Thumbnail Available
    Item
    Brillouin light scattering of ion-implanted and annealed diamond surfaces
    (2016) Motochi, Isaac
    The sub-surface region of chemical vapour deposition (CVD) diamond was transformed by C+ ion implantation followed by isochronal annealing up to 1200 oC. Different implantation regimes and with different energies at different implantation temperatures would give different thicknesses were studied. This enabled a study in the evolution of the stiffness of the damaged layer as a function of annealing. The technique of choice for this study was the non-destructive Brillouin light scattering (BLS) utilizing two scattering geometries; indirectly scattered phonons (Kr¨uger-type geometry) for temperature anneals up to 600 oC, and the conventional surface ripple mechanism up to 1200 oC. It has been argued that surface acoustic waves (SAW) on a transparent medium are enhanced by applying a thin metallic reflective layer on the surface, this study has showed that opacity of the substrate is key. In fact, bulk modes with SAW-like characteristics emanating from indirect photon scattering off phonons after reflection at the smooth reflective back of the sample dominated down to transmission below 5% which was observed after annealing between 500-600 oC (low annealing temperatures). The other complementing techniques employed to understand the changing structure of the ion implanted diamond were Raman spectroscopy, electromagnetic transmission in the visible range, electron energy loss spectroscopy (EELS) and high-resolution transmission electron microscopy (HRTEM) in addition to theoretical techniques: transport of ions in matter (TRIM), finite element modelling (FEM) and elastodynamic Green’s functions. Although the electronic techniques showed a structurally changing material at the low annealing temperatures, the optical ones did not show significant changes in the ion-damaged material possibly due to lack of distinct interface between the pristine diamond and the ion irradiated region at these lower annealing temperatures.
  • No Thumbnail Available
    Item
    Cross-section transmission electron microscopy of the ion implantation damage in annealed diamond
    (2014-01-06) Nshingabigwi, Emmanuel Korawinga
    Diamond with its outstanding and unique physical properties offers the opportunity to be used as semiconductor material in future device technologies. Promising ap- plications are, among others, high speed and high-power electronic devices working under extreme conditions, such as high temperature and harsh chemical environments. With respect to electronic applications, a controlled doping of the material is neces- sary which is preferably done by ion implantation. The ion implantation technique allows incorporation of foreign atoms at de¯ned depths and with controlled spatial distribution which is not achievable with other methods. However, the ion implanta- tion process is always connected with the formation of defects which compensate and trap charge carriers thus degrading the electrical behaviour. It is therefore essential to understand the nature of defects produced under various implantation conditions. In this respect, this study involves the investigation of the nature of the radiation damage produced during the multi-implantation of carbon ions in synthetic high- pressure, high-temperature (HPHT) type Ib diamond spread over a range of energies from 50 to 150 keV and °uences, using the cold-implantation-rapid-annealing (CIRA) routine. Single energy implantation of carbon ions in synthetic HPHT (type Ib), at room temperature, was also performed. Both ion milling and FIB (Focused Ion Beam) milling were used to prepare thin specimen for transmission electron micro- scope (TEM) analysis. The unimplanted, implanted and annealed samples were characterized using trans- mission electron microscopy based techniques and Raman spectroscopy. ii iii In unimplanted type Ia natural diamond, a high density of platelets, exhibiting the typical contrast of both edge-on and inclined platelets on f100g planes was found. As-implanted HPHT type Ib diamond, implanted with single energy of 150 keV car- bon ions and °uence of 7£1015 ions cm¡2 revealed an amorphous diamond layer of about 80 nm in thickness while, for low °uence implantations, the damaged diamond retained its crystallinity after annealing at 1600 K. In addition, damaged diamond transformed into disordered carbon comprising regions with bent (002) graphitic fringes and regions of amorphous carbon when high °uence, i.e., one above the amor- phization/graphitisation threshold were used followed by rapid thermal annealing at 1600 K. Furthermore, the interface between the implanted and annealed layer and the diamond substrate at the end of the range, showed diamond crystallites, inter- spersed between regions of amorphous carbon and partially graphitized carbon. This indicates that solid phase epitaxial recrystallization regrowth in diamond does not occur.