Optical properties of synthetic diamond of different synthesis origin.

Abstract

The aim of this work was to evaluate the measurement of the optical properties as a means of obtaining information on the growth history of synthetic diamond. A suite of sample of known synthesis origin representing the different types of commercially produced synthetic diamond was analysed hy photoluminescence.

The photoh.{fnmescence intensity was normalising by using the area of tbe Raman peak. This allowed a semi-quantitative comparison of the defect concentration. Three photoluminescent centres were identified, H3, 575 run and 1.945 eV (with zero-phonon lines at 2.463 eV, 2.156 eV, and 1.945 eV respectively). Differences between the intensities of the luminescence due to these centres were observed as a function of the type ot diamond The H3 amd the 1.945 eV intensity was found to increase with the proportion of cubic growth sector, In addition the 1.945 eV intensity was found to increase with heat treatment and was higher in (100) than in (111) growth sectors. As all three defects detected involve vacancies and nitrogen impurity, an analysis was done to quantify any correlation between the luminescent intensities from the different defects in the same SDA powder sample. The 1.945 eV and 575 run intensities were observed to be correlated .. An additional correlation 'was found between the 575 lim and the H3 intensities in the case of finer particle size samples. The luminescence intensity for all three defect types was observed to be a function of the particle size of the sample. The shapes and widths of zero-phonon lines were related to the types and concentration of lattice defects present in a crystal according to line broadening theory. An attempt was made to explain the results in the context of the known synthesis origin and growth conditions.