Metal-insulator transition in boron-ion implanted type IIa diamond.

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dc.contributor.authorTshepe, Tshakane
dc.date.accessioned2019-01-22T12:41:50Z
dc.date.available2019-01-22T12:41:50Z
dc.date.issued2000
dc.descriptionA thesis submitted to the Faculty of Science, University of the Witwatersrand, Johannesburg, in fulfillment of the requirements for the degree of Doctor of Philosophy.en_ZA
dc.description.abstractHigh purity natural type Il a diamond specimens were used in this study. Conducting layers in the surfaces of these diamonds were generated using low-ion dose multiple implantation-annealing steps. The implantation energies and the ion-doses were spread evenly to intermix the point-defects, thereby increasing the probability of interstitialvacancy recombinations and promoting dopant-interstitial-vacancy combination resulting in activated dopant sites in the implanted layers. The process used to prepare our samples is known as cold-implantation-rapid-annealing (CIRA). Carbon-ion and boron-ion implantation was used to prepare the diamond specimens, and de-conductivity measurements in the temperature range of 1.5-300 K were made following each CIRA sequence. An electrical conductivity crossover from the Mott variable range hopping (VRH) to the Efros-Shklovskii VRH conduction was observed when the temperature of insulating samples was lowered. The conductivity crossover temperature Tcross decreases with increasing concentration of the boron-ion dose in the implanted layers, indicating the narrowing of the Coulomb gap in the single-particle density of states near the Fermi energy. (Abbreviation abstract)en_ZA
dc.description.librarianAndrew Chakane 2019en_ZA
dc.identifier.urihttps://hdl.handle.net/10539/26301
dc.language.isoenen_ZA
dc.subjectMetal-insulator transitions.en_ZA
dc.subjectTransition metals.en_ZA
dc.subjectIon implantation.en_ZA
dc.titleMetal-insulator transition in boron-ion implanted type IIa diamond.en_ZA
dc.typeThesisen_ZA
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