Electrical conduction in carbon-ion implanted diamond and other materials at low temperatures.

dc.contributor.authorTshepe, Tshakane Frans
dc.date.accessioned2019-01-22T12:30:47Z
dc.date.available2019-01-22T12:30:47Z
dc.date.issued1992
dc.descriptionA research report submitted to the Faculty of Science, University of the Witwatersrand, Johannesburg, in partial fulfilment of the requirements for the degree of Master of Scienceen_ZA
dc.description.abstractThe role of intersite electron correlation effects and the possible occurrence of the metal-insulator transition in carbon-ion implanted type IIa diamond samples have been studied at very low temperatures, using four- and two-point probe contact electrical conductivity measuring techniques. The measurements were extended to ruthenium oxide thin films in the presence and absence of a constant magnetic field of B = 4.0 T down to 100 mK, using a 3He-4He dilution refrigerator. The effect of the Coulomb gap in the variable range hopping regime has been well studied by other workers. The results tend to follow the Efros-Shklovskii behaviour with a trend towards the Mott T- 114 law for diamond samples far removed from the metal insulator transition, on the insulating side at low temperatures.en_ZA
dc.description.librarianAndrew Chakane 2019en_ZA
dc.identifier.urihttps://hdl.handle.net/10539/26299
dc.language.isoenen_ZA
dc.subjectElectric conductivity.en_ZA
dc.subjectIon implantation.en_ZA
dc.subjectCarbon compounds.en_ZA
dc.subjectMaterials at low temperatures.en_ZA
dc.titleElectrical conduction in carbon-ion implanted diamond and other materials at low temperatures.en_ZA
dc.typeThesisen_ZA
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