Electrical conduction in carbon-ion implanted diamond and other materials at low temperatures.
Date
1992
Authors
Tshepe, Tshakane Frans
Journal Title
Journal ISSN
Volume Title
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Abstract
The role of intersite electron correlation effects and the possible occurrence of the
metal-insulator transition in carbon-ion implanted type IIa diamond samples have been
studied at very low temperatures, using four- and two-point probe contact electrical
conductivity measuring techniques. The measurements were extended to ruthenium
oxide thin films in the presence and absence of a constant magnetic field of B = 4.0 T
down to 100 mK, using a 3He-4He dilution refrigerator. The effect of the Coulomb gap
in the variable range hopping regime has been well studied by other workers. The results
tend to follow the Efros-Shklovskii behaviour with a trend towards the Mott T- 114 law
for diamond samples far removed from the metal insulator transition, on the insulating
side at low temperatures.
Description
A research report submitted to the Faculty of Science, University of the Witwatersrand,
Johannesburg, in partial fulfilment of the requirements for the degree of Master of
Science
Keywords
Electric conductivity., Ion implantation., Carbon compounds., Materials at low temperatures.